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ITA6V5B3 / ITA10B3 ITA18B3 / ITA25B3
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION
Application Specific Discretes A.S.D.TM
APPLICATIONS
Differential data transmission lines protection : - RS-232 - RS-423 - RS-422 - RS-485 FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A (8/20s) PEAK PULSE POWER : 300 W (8/20s) SEPARATED INPUT-OUTPUT UP TO 9 BIDIRECTIONAL TRANSIL FUNCTIONS LOW CLAMPING FACTOR (VCL / VBR) AT HIGH CURRENT LEVEL LOW LEAKAGE CURRENT ESD PROTECTION UP TO 15kV DESCRIPTION Transil diode arrays provide high overvoltage protectionby clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's. The ITA series allies high surge capability against energetic pulses with high voltage performance against ESD. The separated input/output configuration of the device ensures improved protection against very fast transient overvoltage like ESD by elimination of the spikes induced by parasitic inductances created by external wiring. COMPLIESWITHTHE FOLLOWINGSTANDARDS : IEC 1000-4-2 : level 4 IEC 1000-4-4 : level 4 IEC 1000-4-5 : level 2 MIL STD 883C - Method 3015-6 : class 3 (human body model)
SO20
FUNCTIONAL DIAGRAM
January 1998 Ed: 2
1/6
ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol PPP IPP I2 t Tstg Tj TL Parameter Peak pulse power dissipation (8/20s) (see note 1) Peak pulse current (8/20s) (see note 1) Wire I2t value (see note 1) Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s
%I pp 100 8s
Value Tj initial = Tamb Tj initial = Tamb 300 40 0.6 - 55 to + 150 125 260
Unit W A A2s C C C
Note 1 : For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting.
Pulse wave form 8/20 s 50
0 20 s
t
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Junction capacitance
T
C
Types
IRM max.
@
VRM
VBR min. note 2
@
IR
VCL
@
IPP 8/20s
VCL max. note 2
@
IPP 8/20s
T max.
C max. note 3
note 2 mA 1 1 1 1 V 9.5 13 21 31 A 10 10 10 10
A
V 5 8 15 24
V 6.5 10 18 25
V 11 17 26 36
A 25 25 25 25
10 /C 4 8 9 12
-4
pF 1100 800 500 420
ITA6V5B3 ITA10B3 ITA18B3 ITA25B3
10 4 4 4
Note 2 : Between I/O pin and ground. Note 3 : Between two input Pins at 0V Bias. Preferred types in bold.
2/6
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ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3
Fig. 1 : Typical peak pulse power versus exponential pulse duration.
1E+04 P P P (W)
ITA25B3 ITA18B3
Fig. 2 : Clamping voltage versus peak pulse current (exponential waveform 8/20 s).
T j initial = 25 oC
1E+03
ITA6V5B3 ITA10B3
1E+02
1E+01 1E-03
t P (ms) expo 1E-02 1E-01 1E+00 1E+01 1E+02
Fig. 3 : Peak current IDC inducing open circuit of the wire for one input/output versus pulse duration (typical values).
1E+03 I DC (A) expon ential waveform
Fig. 4 : Junction capacitance versus reverse applied voltage for one input/output (typical values).
1E+02
1E+01
1E+00 1E-02 1E-01 1E+00
t (ms) 1E+01
Fig. 5 : Relative variation of leakage current versus junction temperature
3/6
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ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
APPLICATION INFORMATION Types ITA6V5B3 ITA10B3 ITA18B3 ITA25B3 Maximum differential voltage between two input pins at 25C
+ / - 3.5 V + / - 5.0 V + / - 9.0 V + / - 12.5 V
This monolithic Transil Array is based on 10 unidirectionalTransils with a commoncathode and can be configurated to offer up to 9 bidirectional functions. This imposes a maximum differential voltage between 2 input pins (see opposite table).
Typical application : RS232 junction.
TX RX RTS CTS DTR DSR CARRIER DET. AUX
GND
4/6
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ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3
APPLICATION NOTICE Design advantage of ITAxxxB3 used with 4-point structure. The ITAxxxB3 has been designed with a 4-point structure (separated Input/output) in order to efficiently protect against disturbances with very high di/dt rates, such as ESD. The purpose of this 4-point structure is to eliminate the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt). Efficient protection depends not only on the component itself, but also on the circuit layout.The drawing given in figure shows the layout to be used in order to take advantage of the 4-point structure of the ITAxxxB3. With this layout, each line to be protected passes through the protection device. In this way, it realizes an interface between the data line and the circuit to be protected, guaranteeing an isolation between its inputs and outputs.
The 4 - point structure layout.
ORDER CODE
ITA 25 B 3
INTEGRATED TRANSIL ARRAY VBR min
RL
PACKAGING: RL = Tape and reel. = Tube. PACKAGE : SO20 PLASTIC BIDIRECTIONAL
5/6
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ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
MARKING TYPE
ITA6V5B3 ITA10B3 ITA18B3 ITA25B3
MARKING
ITA6V5B2 ITA10B3 ITA18B3 ITA25B3
PACKAGE MECHANICAL DATA SO20 (Plastic) DIMENSIONS REF. Millimetres Min. A A1 B C D E e H h L K 0.50 10.0 0.50 1.27 0.020 8 (max) 0.10 0.33 0.23 12.6 7.40 1.27 10.65 0.394 0.020 0.050 Typ. Max. Min. 2.65 0.20 0.004 0.51 0.013 0.32 0.009 13.0 0.484 7.60 0.291 0.050 0.419 Inches Typ. Max. 0.104 0.008 0.020 0.013 0.512 0.299
Packaging : standard packaging is tape and reel. Weight : 0.55g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectronics.
(c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6
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